Capacitive response study of ZnO based metal-semiconductor-metal ultraviolet photodetector

Abstract

In the dynamic domain of sensor technology, the integration of customized ultraviolet (UV) light detectors utilizing easily synthesizable metal oxide presents a transformative advantage in the optoelectronic landscape. This research elucidates the promising potential of Zinc Oxide (ZnO) as a transducer material for integrated optical technologies, expanding the horizon of integrated optical sensor systems and offering a streamlined approach to embedding light detectors into optoelectronic devices. At the heart of this study lies the development of a capacitive metal-semiconductor-metal (MSM) ultraviolet photodetector (UVPD), harnessing the exceptional properties of ZnO as the foundational semiconductive material. The detector demonstrates a notable optical response, particularly prominent around 386 nm, aligning closely with ZnO's calculated optical band gap. The simplicity of fabrication renders this detector system highly suitable for industrial optoelectronic applications. The precise printing capability of ZnO within integrated systems facilitates the creation of builtin transducers, effectively converting light signals into electrical signals. This feature enhances sensitivity and accuracy while streamlining system miniaturization efforts.